学术论文

Y.G. Li, S.F. Mao, H.M. Li, S.M. Xiao and Z.J. Ding
Monte Carlo Simulation Study of SEM Images of Rough Surfaces
J. Appl. Phys. (2008, accepted).

S.M. Xiao, Z.M. Zhang, H.M. Li and Z.J. Ding
Monte Carlo Simulation of SEM Image of Sidewall Shape for Linewidth Measurement
International Conference on Nanoscience & Technology, China (Beijing), 2007 (oral).

Y.G. Li, Z.M. Zhang, H.M. Li and Z.J. Ding
Monte Carlo Simulation Study of Quasi-Elastic Electron Scattering from an Overlayer/Substrate System International Conference on Nanoscience & Technology, China (Beijing), 2007 (poster).

Z.J. Ding, Y.G. Li, H.M. Li, Z.M. Zhang and X. Sun
Monte Carlo Simulation Study of Auger Electron Images
3rd China-Japan Joint Seminar on Atomic Level Characterization, China (Xiamen), 2006, (invited).
《现代科学仪器》 2006年增刊第12-13页.

Z.J. Ding, K. Salma, H.M. Li, Z.M. Zhang, K. Tokesi, D. Varga, J. Toth, K. Goto and R. Shimizu
Monte Carlo Simulation Study of Electron Interaction with Solids and Surfaces
11th European Conference on Applications of Surface and Interface Analysis, Austria (Vienna), 2005, 邀请报告.
Surf. Interface Anal. 38 (2006) 657-663.

Z.M. Zhang, Z.J. Ding, H.M. Li, K. Tokesi, D. Varga and J. Toth
Effective Energy Loss Function of Silver Derived from Reflection Electron Energy Loss Spectra
11th European Conference on Applications of Surface and Interface Analysis, Austria (Vienna), 2005.
Surf. Interface Anal. 38 (2006) 632-635.

K. Salma, Z.J. Ding, H.M. Li and Z.M. Zhang
Surface Excitation Probabilities in Surface Electron Spectroscopies
Surf. Sci. 600 (2006) 1526-1539.

Y.T. Yue, H.M. Li and Z.J. Ding
Monte Carlo Simulation of Secondary Electron and Backscattered Electron Images for a Nanoparticle-Matrix System
J. Phys. D: Appl. Phys. 38 (2005) 1966-1977.

Z.J. Ding and H.M. Li
Monte Carlo Simulation Study of SEM Image for Complex Structures
5th International Symposium on Atomic Level Characterizations for New Materials and Devices, USA (Hawaii), 2005, 邀请报告.

李会民、丁泽军、孙霞
模拟扫描电镜像衬度的体构件Monte Carlo方法
《电子显微学报》,2005年24卷50-56页.

H.M. Li and Z.J. Ding
Monte Carlo Simulation of Secondary Electron and Backscattered Electron Images in Scanning Electron Microscopy for Specimen with Complex Geometric Structure
Scanning 27 (2005) 254-267.

Z.J. Ding and H.M. Li
Application of Monte Carlo Simulation to SEM Image Contrast of Complex Structures
NIST Workshop on Modeling Electron Transport for Applications in Electron and X-ray Analysis and Metrology, 2004, USA (Gaitherburg), 邀请 报告
Surf. Interface Anal. 37 (2005) 912-918.

K. Salma, Z.J. Ding, H.M. Li and Z.M. Zhang
Quantification of Surface Effects in Electron Spectroscopy
J. Surf. Anal. 12 (2005) 272-281.

Z.J. Ding, K. Salma, H.M. Li and Z.M. Zhang
Quantification of Surface Effects in Electron Spectroscopy
3rd International Symposium on Practical Surface Analysis, 2004, Korea (Jeju), 邀请报告

H.M. Li and Z.J. Ding
A Monte Carlo Simulation of Secondary and Backscattered Electrons Images of SEM
Acta Metall. Sinica 18 (2005) 351-355.

X. Sun, Z.J. Ding, H.M. Li, K. Salma, Z.M. Zhang and W.S. Tan
Monte Carlo Simulation of Spin-Polarized Secondary Electrons from Iron
Acta Metall. Sinica 18 (2005) 325-330.

Z.J. Ding, H.M. Li and X. Sun
Application of Monte Carlo Simulation Method to the Nano-scale Characterization by Scanning Electron Microscopy
Mater. Sci. Forum 475-479 (2005) 4161-4164.

Z.J. Ding, H.M. Li, K. Goto, Y.Z. Jiang and R. Shimizu
Energy Spectra of Backscattered Electrons in Auger Electron Spectroscopy: Comparison of Monte Carlo Simulation with Experiment
J. Appl. Phys. 96 (2004) 4598-4606.

Z.J. Ding, H.M. Li, X.D. Tang and R. Shimizu
Monte Carlo Simulation of Absolute Secondary Electron Yield of Cu
Appl. Phys. A 78 (2004) 585-587.

K. Salma, Z.J. Ding, H.M. Li and Z.M. Zhang
Surface Excitation Parameter in Quantitative Surface Analysis by Electron Spectroscopy
Acta Metall. Sinica 18 (2005) 313-318.

Z.M. Zhang, Z.J. Ding, H.M. Li, X. Sun, R. Shimizu, T. Koshikawa and K. Goto
Energy-Loss Functions Derived from REELS Spectra for Aluminum
Acta Metall. Sinica 18 (2005) 217-222.

李会民、丁泽军
结合体构造的Monte Carlo方法模拟扫描电镜成像衬度
《电子显微学报》(全国第十三届电子显微学会议文集),2004年23卷362页.

丁泽军、岳玉涛、李会民
纳米颗粒体系扫描电镜成像表征的计算机模拟
国家自然科学基金委纳米科技基础重大研究计划项目年度研讨会议,2004.

Z.J. Ding and H.M. Li
Monte Carlo Simulationof Electron Signals and Image Contrast in SEM
International 10th Beijing Conference and Exhibition on Instrumental Analysis, China (Beijing), 2003, 邀请报告.

李会民、丁泽军
Monte Carlo模拟有特殊几何边界试样的扫描电镜成像衬度
《电子显微学报》(全国第三届扫描电子显微学会议文集),2003年22卷514-515 页.

丁泽军、李会民
蒙特卡洛方法在扫描电子显微学中的应用
《电子显微学报》(全国第三届扫描电子显微学会议文集),2003年22卷512-513 页.

Z.J. Ding, H.M. Li, Q.R. Pu, Z.M. Zhang and R. Shimizu
REELS-Spectrum of Surface Plasmon Excitation of Ag: A Monte Carlo Study
Phys. Rev. B 66 (2002) 085411.

Z.J. Ding, X.D. Tang and H.M. Li
Monte Carlo Calculation of the Energy Distribution of Backscattered Electrons
Int. J. Mod. Phys. B 16 (2002) 4405-4412.

H.M. Li, Z.J. Ding, Q.R. Pu and Z.M. Zhang
Monte Carlo Simulation of Surface Electronic Excitation of Noble Metals
Acta Metall. Sinica 15 (2002) 191-197.

X. Sun, Z.J. Ding, Q.R. Pu, H.M. Li, Z.Q. Wu, W.Q. Gu, K.W. Peng, G.J. Wu, F.A. Zhang and N.K. Kang
Monte Carlo Simulation of Electron Transmission Through the Scattering Masks with Angular Limitation for Projection Electron Lithography
J. Appl. Phys. 92 (2002) 3641-3646.

Z.J. Ding, H.M. Li and X.D. Tang
Calculation of Electron-Surface Inelastic Interaction Cross-Section and Monte Carlo Simulation of Surface Excitation
HPC-ASIA2000, vol 2 (IEEE computer society) 1118-1124.

Z.J. Ding, H.M. Li, K. Goto, Y.Z. Jiang and R. Shimizu
Energy Spectra of Backscattered Electrons in AES: Comparison of Monte Carlo Simulation with Experiment
2nd China-Japan Joint Seminar on Atomic Level Characterization, China (Guilin), 2002.

Z.J. Ding, H.M. Li, X.D. Tang
Applications of Monte Carlo Simulation Method to Surface Characterization
The 8th International Conference on Electronic Materials, China, 2002.

Z.J. Ding, H.M. Li, Q.R. Pu, X. Sun, Z.M. Zhang and Z.Q. Wu
Some Applications of Monte Carlo Simulation of Electron Scattering at nm Scale
3rd International Symposium on Atomic Level Characterizations for New Materials and Devices, Japan, 2001.