Cite as: Mehnaz, T.F. Yang, Bo Da and Z.J. Ding, Exploring Universal Formula for Absolute Secondary Electron Yield
by
using Machine Learning Methods. (unpublished).
SEY of Si [1]
| Energy (keV) |
Yield |
| 0.200 |
0.748 |
| 0.300 |
0.740 |
| 0.400 |
0.735 |
| 0.600 |
0.607 |
| 0.800 |
0.523 |
| 1.000 |
0.440 |
| 2.000 |
0.273 |
| 3.000 |
0.194 |
| 4.000 |
0.150 |
SEY of Si [2]
| Energy (keV) |
Yield |
| 0.150 |
0.635 |
| 0.200 |
0.879 |
| 0.250 |
0.969 |
| 0.300 |
1.021 |
| 0.350 |
1.054 |
| 0.400 |
1.037 |
| 0.450 |
1.014 |
| 0.500 |
1.054 |
| 0.550 |
1.021 |
| 0.600 |
0.992 |
| 0.650 |
0.963 |
| 0.700 |
0.976 |
| 0.750 |
0.963 |
| 0.800 |
0.941 |
| 0.850 |
0.927 |
| 0.900 |
0.906 |
| 0.950 |
0.899 |
| 1.000 |
0.872 |
| 1.200 |
0.860 |
| 1.300 |
0.822 |
| 1.500 |
0.744 |
| 1.800 |
0.675 |
| 2.000 |
0.617 |
| 2.500 |
0.522 |
| 3.200 |
0.449 |
| 3.500 |
0.407 |
| 4.000 |
0.367 |
| 4.500 |
0.337 |
| 5.000 |
0.315 |
SEY of Si [3]
| Energy (keV) |
Yield |
| 3.000 |
0.769 |
| 5.000 |
0.490 |
| 10.000 |
0.343 |
| 20.000 |
0.216 |
| 30.000 |
0.138 |
SEY of Si [4]
| Energy (keV) |
Yield |
| 10.000 |
0.215 |
| 15.000 |
0.136 |
| 20.000 |
0.104 |
| 25.000 |
0.081 |
| 30.000 |
0.075 |
SEY of Si [5]
| Energy (keV) |
Yield |
| 0.050 |
0.604 |
| 0.100 |
0.854 |
| 0.150 |
1.010 |
| 0.200 |
1.125 |
| 0.250 |
1.146 |
| 0.300 |
1.167 |
| 0.400 |
1.167 |
| 0.500 |
1.117 |
| 0.600 |
1.083 |
| 0.700 |
1.040 |
| 0.800 |
1.000 |
| 0.900 |
0.980 |
| 1.000 |
0.937 |
SEY of Si [6]
| Energy (keV) |
Yield |
| 5.000 |
0.326 |
| 30.000 |
0.097 |
SEY of Si [7]
| Energy (keV) |
Yield |
| 0.200 |
0.900 |
| 0.300 |
0.690 |
| 0.500 |
0.870 |
| 0.600 |
0.720 |
| 0.700 |
0.680 |
| 0.800 |
0.660 |
| 0.900 |
0.660 |
| 1.000 |
0.600 |
| 1.100 |
0.540 |
| 1.200 |
0.560 |
| 1.300 |
0.560 |
| 1.400 |
0.520 |
| 1.500 |
0.510 |
| 1.600 |
0.400 |
| 1.700 |
0.520 |
| 1.800 |
0.280 |
| 2.000 |
0.430 |
| 2.200 |
0.480 |
| 2.400 |
0.310 |
| 2.600 |
0.380 |
| 2.800 |
0.290 |
| 3.000 |
0.310 |
| 3.200 |
0.290 |
| 3.400 |
0.280 |
| 3.600 |
0.280 |
| 3.800 |
0.250 |
| 4.000 |
0.250 |
| 4.500 |
0.260 |
| 5.000 |
0.240 |
SEY of Si [8]
| Energy (keV) |
Yield |
| 0.700 |
1.220 |
| 1.000 |
0.980 |
| 1.500 |
0.790 |
| 2.000 |
0.640 |
| 3.000 |
0.530 |
| 4.000 |
0.440 |
| 5.000 |
0.367 |
| 7.000 |
0.310 |
| 10.000 |
0.185 |
References:
- [1] Bronstein, I. M.; Fraiman, B. S., Vtorichnaya elektronnaya emissiya. Nauka, Moskva 1969, 340.
- [2] Walker, C. G.; El-Gomati, M. M.; Assad, A. M.; Zadrazil, M., The secondary electron emission yield for
24 solid elements excited by primary electrons in the range 250-5000 eV: a theory/experiment comparison.
Scanning 2008, 30, 365-80.
- [3] Reimer, L.; Tolkamp, C., Measuring the backscattering coefficient and secondary electron yield inside a
scanning electron microscope. Scanning 1980, 3, 35.
- [4] Joy, D. C., A database of electron-solid interactions. (2008).
- [5] Dionne, G. F., Origin of secondary electron emission yield curve parameters. J. Appl. Phys.
1975, 46, 3347-3351.
- [6] Wittry, D. B., In: Proc. 4th Conf. on X-ray Optics and Microanalysis, Hermann Paris, Castaing,
R., Ed. Hermann Paris, 1966; p 168.
- [7] Rothwell, T. E.; Russell, P. E., In: Microbeam Analysis, Newbury, D. E., Ed. San Francisco:
1988; p 149.
- [8] Joy, D. C.; Joy, C. S. SEMATECH Report # 96063130A-TR; 1996.
