Database of Ding's Microsolid Lab

Cite as: M.S.S. Khan, S.F. Mao, Y.B. Zou, D.B. Lu, B. Da, Y.G. Li and Z.J. Ding, An Extensive Theoretical Quantification of Secondary Electron Emission from Silicon. Vacuum 215 (2023) 112257. DOI: 10.1016/j.vacuum.2023.112257
Click to expand ELF information
Si from photon energy range (eV) and the corresponding dataset in literature
crystal (Palik) 0.01–1.10 [1,2] 1.10-3.10 [3] 3.10-6.00 [4] 6.00–20.0 [5] 20.0–100 [6] 100-2000 [7] 2000-10000 [8]
crystal (Yang) 0.01–200 [9] 200-2000 [7]
doped (Palik) 0.01–1.10 [6,10] 1.10-3.10 [3] 3.10–60 [4] 6.00–20.0 [5] 20.0–100 [6] 100-2000 [7]
BSC of Si
Energy (eV) Yield error
50 0.012304 0.032739
60 0.094510 0.019865
70 0.118341 0.017239
80 0.139494 0.014169
90 0.156415 0.012008
100 0.171122 0.010687
125 0.198896 0.009336
150 0.217838 0.009028
175 0.231391 0.008814
200 0.241785 0.008634
250 0.255079 0.008196
300 0.262049 0.007798
350 0.265258 0.007422
400 0.266190 0.007184
450 0.265893 0.006903
500 0.264744 0.006651
600 0.261314 0.006343
700 0.257254 0.006064
800 0.253194 0.005871
900 0.249273 0.005649
1000 0.245832 0.005557
1500 0.230757 0.005307
2000 0.221165 0.004641
2500 0.213982 0.004659
3000 0.208696 0.004245
3500 0.204319 0.004070
4000 0.200679 0.003931
4500 0.197708 0.003823
5000 0.195047 0.003760
6000 0.190915 0.003668
7000 0.188025 0.003618
8000 0.184725 0.003579
9000 0.181944 0.003578
10000 0.179457 0.003581